2
RF Device Data
Freescale Semiconductor
MRF6VP21KHR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
20
μAdc
Drain--Source Breakdown Voltage
(ID
= 300 mA, VGS
=0Vdc)
V(BR)DSS
110
?
?
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
100
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 100 Vdc, VGS
=0Vdc)
IDSS
?
?
5
mA
On Characteristics
Gate Threshold Voltage
(1)
(VDS
=10Vdc,ID
= 1600
μAdc)
VGS(th)
1
1.68
3
Vdc
Gate Quiescent Voltage
(2)
(VDD
=50Vdc,ID
= 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.2
3.5
Vdc
Drain--Source On--Voltage
(1)
(VGS
=10Vdc,ID
=4Adc)
VDS(on)
?
0.28
?
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
3.3
?
pF
Output Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
147
?
pF
Input Capacitance
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
506
?
pF
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 150 mA, Pout
= 1000 W Peak (200 W Avg.), f = 225 MHz,
100
μsec Pulse Width, 20% Duty Cycle
Power Gain
Gps
22
24
26
dB
Drain Efficiency
ηD
65
67.5
?
%
Input Return Loss
IRL
?
-- 1 5
-- 9
dB
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
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